Please use this identifier to cite or link to this item: http://repo.lib.jfn.ac.lk/ujrr/handle/123456789/4378
Full metadata record
DC FieldValueLanguage
dc.contributor.authorKuganathan, N.
dc.contributor.authorSashikesh, G.
dc.contributor.authorChroneos, A.
dc.date.accessioned2021-12-09T04:17:23Z
dc.date.accessioned2022-07-11T08:25:23Z-
dc.date.available2021-12-09T04:17:23Z
dc.date.available2022-07-11T08:25:23Z-
dc.date.issued2019
dc.identifier.urihttp://repo.lib.jfn.ac.lk/ujrr/handle/123456789/4378-
dc.description.abstractIn this study, force field-based simulations are employed to examine the defects in Li-ion diffusion pathways together with activation energies and a solution of dopants in Li2Ti6O13. The lowest defect energy process is found to be the Li Frenkel (0.66 eV/defect), inferring that this defect process is most likely to occur. This study further identifies that cation exchange (Li–Ti) disorder is the second lowest defect energy process. Long-range diffusion of Li-ion is observed in the bc-plane with activation energy of 0.25 eV, inferring that Li ions move fast in this material. The most promising trivalent dopant at the Ti site is Co3+, which would create more Li interstitials in the lattice required for high capacity. The favorable isovalent dopant is the Ge4+ at the Ti site, which may alter the mechanical property of this material. The electronic structures of the favorable dopants are analyzed using density functional theory (DFT) calculations.en_US
dc.language.isoenen_US
dc.publisherMDPIen_US
dc.subjectLi2Ti6O13en_US
dc.subjectDefectsen_US
dc.subjectLi-ion diffusionen_US
dc.subjectDopantsen_US
dc.subjectAtomistic simulationen_US
dc.subjectDFTen_US
dc.titleDefects, Diffusion, and Dopants in Li2Ti6O13: Atomistic Simulation Studyen_US
dc.typeArticleen_US
Appears in Collections:Chemistry

Files in This Item:
File Description SizeFormat 
Deffects Diffusion and dopants in Li.pdf4.57 MBAdobe PDFThumbnail
View/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.